Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped <b><i>?</i></b>-Ga<sub>2</sub>O<sub>3</sub> Schottky rectifiers
نویسندگان
چکیده
Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current time-resolved cathodoluminescence Si-doped ?-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles 10 protons. Both exhibited a decrease increasing temperature. The non-equilibrium minority mobility was calculated from the independently lifetime, indicating that so-called self-trapping is most likely irrelevant 77–295 K temperature range.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0052601